Product Summary

The MMBT3904 is a NPN General Purpose Amplifier. This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

Parametrics

Absolute maximum ratings: (1)Collector-Emitter Voltage: 40 V; (2)Collector-Base Voltage: 60 V; (3)Emitter-Base Voltage: 6.0 V; (4)Collector Current - Continuous: 200 mA; (5)Operating and Storage Junction Temperature Range: -55 to +150 ℃.

Features

Features: (1)Collector-Emitter Breakdown Voltage: 40 V at IC = 1.0 mA, IB = 0; (2)Collector-Base Breakdown Voltage: 60 V at IC = 10 μA, IE = 0; (3)Emitter-Base Breakdown Voltage: 6.0 V at IE = 10 μA, IC = 0; (4)Collector Cutoff Current: 50 nA at VCE = 30 V, VEB = 3V.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MMBT3904
MMBT3904
Fairchild Semiconductor
Transistors Bipolar (BJT) SOT-23 NPN GEN PUR
Data Sheet
0-1: $0.07
1-25: $0.06
25-100: $0.04
100-250: $0.03
MMBT3904,215
MMBT3904,215
NXP Semiconductors
Transistors Bipolar (BJT) TRANS SW TAPE-7
Data Sheet
0-1: $0.03
1-25: $0.01
25-100: $0.01
100-500: $0.01
500-3000: $0.01
MMBT3904_D87Z
MMBT3904_D87Z
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Transistor General Purpose
Data Sheet
0-1: $0.05
1-25: $0.04
25-100: $0.03
100-250: $0.02
MMBT3904_L99Z
MMBT3904_L99Z
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Gen Purp Amp
Data Sheet
Negotiable 
MMBT3904_NL
MMBT3904_NL
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN GEN PUR -Pb
Data Sheet
Negotiable 
MMBT3904_Q
MMBT3904_Q
Fairchild Semiconductor
Transistors Bipolar (BJT) SOT-23 NPN GEN PUR
Data Sheet
Negotiable 
MMBT3904LP-7
MMBT3904LP-7
Diodes Inc.
Diodes (General Purpose, Power, Switching) NPN SM SIG 60V VCBO 40V VCEO 6.0 VEBO
Data Sheet
0-1: $0.26
1-10: $0.19
10-100: $0.12
100-250: $0.09
MMBT3904-7-F
MMBT3904-7-F
Diodes Inc.
Transistors Bipolar (BJT) 40V 300mW
Data Sheet
0-1: $0.17
1-10: $0.11
10-100: $0.03
100-500: $0.03