Product Summary
The MMBT3904 is a NPN General Purpose Amplifier. This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
Parametrics
Absolute maximum ratings: (1)Collector-Emitter Voltage: 40 V; (2)Collector-Base Voltage: 60 V; (3)Emitter-Base Voltage: 6.0 V; (4)Collector Current - Continuous: 200 mA; (5)Operating and Storage Junction Temperature Range: -55 to +150 ℃.
Features
Features: (1)Collector-Emitter Breakdown Voltage: 40 V at IC = 1.0 mA, IB = 0; (2)Collector-Base Breakdown Voltage: 60 V at IC = 10 μA, IE = 0; (3)Emitter-Base Breakdown Voltage: 6.0 V at IE = 10 μA, IC = 0; (4)Collector Cutoff Current: 50 nA at VCE = 30 V, VEB = 3V.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||
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MMBT3904 |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-23 NPN GEN PUR |
Data Sheet |
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MMBT3904,215 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS SW TAPE-7 |
Data Sheet |
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MMBT3904_D87Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Transistor General Purpose |
Data Sheet |
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MMBT3904_L99Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Gen Purp Amp |
Data Sheet |
Negotiable |
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MMBT3904_NL |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN GEN PUR -Pb |
Data Sheet |
Negotiable |
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MMBT3904_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-23 NPN GEN PUR |
Data Sheet |
Negotiable |
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MMBT3904LP-7 |
Diodes Inc. |
Diodes (General Purpose, Power, Switching) NPN SM SIG 60V VCBO 40V VCEO 6.0 VEBO |
Data Sheet |
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MMBT3904-7-F |
Diodes Inc. |
Transistors Bipolar (BJT) 40V 300mW |
Data Sheet |
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