(China (Mainland))
Product Summary
The BSS84 is a P-CHANNEL enhancement mode field effect transistor.
Parametrics
Absolute maximum ratings: (1)Drain-Source Voltage:-50V ; (2)Drain-Gate Voltage RGS ≤ 20KΩ:-50V ; (3)Gate-Source Voltage:Continuous:±20V ; (4)Drain Current:Continuous:-130mA ; (5)Pulsed Drain Current:-1.2A.
Features
Features: (1)Low On-Resistance ; (2)Low Gate Threshold Voltage ; (3)Low Input Capacitance ; (4)Fast Switching Speed ; (5)Low Input/Output Leakage ; (6)Lead, Halogen and Antimony Free, RoHS Compliant; (7)"Green" Device; (8)Qualified to AEC-Q101 Standards for High Reliability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BSS84 |
Fairchild Semiconductor |
MOSFET SOT-23 P-CH ENHANCE |
Data Sheet |
|
|
||||||||||||
 |
BSS84_D87Z |
Fairchild Semiconductor |
MOSFET P-Ch Spec Enhance Mode Field Effect |
Data Sheet |
Negotiable |
|
||||||||||||
 |
BSS8402DW-7-F |
Diodes Inc. |
MOSFET 60 / -50V 200mW |
Data Sheet |
|
|
||||||||||||
 |
BSS84-7 |
Diodes Inc. |
MOSFET -50V 250mW |
Data Sheet |
Negotiable |
|
||||||||||||
|
BSS84-7-F |
Diodes Inc. |
MOSFET -50V 250mW |
Data Sheet |
|
|
||||||||||||
 |
BSS84AK,215 |
NXP Semiconductors |
MOSFET P-CH -50 V -180 mA |
Data Sheet |
|
|
||||||||||||
 |
BSS84AKMB,315 |
NXP Semiconductors |
MOSFET P-Chan -50V -230mA |
Data Sheet |
|
|
||||||||||||
 |
BSS84AKT,115 |
NXP Semiconductors |
MOSFET P-CH -50 V -150 mA |
Data Sheet |
|
|
||||||||||||
